Figure 4. Synthetic genetic interactions of LS1 with RAD52 epistasis group deletions. A comprehensive screen of the non-essential deletion collection revealed synthetic growth defects of LS1 together with deletions of genes required for homologous recombination. (A) Three-fold dilutions (starting at 0.1 OD600) of log phase growing cultures of parental (BY4741) and deletion strains were plated at 30oC for 48 h onto SCD agar containing 0.1% DMSO vehicle (control) without or with 10µM LS1. (B) DNA content by flow cytometry of LS1 treated parental BY4741 and rad52∆ cells. Log phase liquid cultures were treated with 0.1% DMSO vehicle (control) without or with 10µM LS1 for 6h followed by fixation with ethanol and propidium iodide staining as described in Materials and Methods. (C) Quantitative effect of increasing concentrations of LS1 on cell viability in log cultures of RAD52 and rad52∆ cells. Quantitation of cell viability is described in Materials and Methods.